Fabrication of highly air-stable ambipolar thin-film transistors with organic heterostructure of F16CuPc and DH-α6T

Solid-State Electronics

Volumn 52, Issue 1, 2008, Pages 60-62

  Ye, Rongbin ^a   Baba, Mamoru ^a   Suzuki, Kazunori ^b   Mori, Kunio ^a  

^a IWATE UNIVERSITY   (Japan)

^b IWATE INDUSTRIAL RESEARCH INSTITUTE   (Japan)

Author keywords

Ambipolar characteristics; Field effect mobility; Organic thin film transistor

Indexed keywords

CMOS INTEGRATED CIRCUITS; COPPER COMPOUNDS; ELECTRIC INVERTERS; HETEROJUNCTIONS; HOLE CONCENTRATION;

AMBIPOLAR CHARACTERISTICS; ELECTRON FIELD-EFFECT MOBILITIES; FIELD-EFFECT MOBILITY; ORGANIC THIN FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 36249025693     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.07.010     Document Type: Article

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