Dependence of ambipolar transport on first active layer thickness in organic homostructure transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 A, 2007, Pages 2878-2881

  Ye, Rongbin ^a   Baba, Mamoru ^a   Suzuki, Kazunori ^b   Mori, Kunio ^a  

^a IWATE UNIVERSITY   (Japan)

^b IWATE INDUSTRIAL RESEARCH INSTITUTE   (Japan)

Author keywords

Ambipolar transport; Field effect mobility; Organic thin film transistor; Pn junction

Indexed keywords

ELECTRON MOBILITY; FILM THICKNESS; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

ACTIVE LAYER THICKNESS; AMBIPOLAR TRANSPORT; HOMOSTRUCTURE; N-TYPE OPERATING CHARACTERISTICS; PTFT;

THIN FILM TRANSISTORS;

EID: 34547911855     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2878     Document Type: Article

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