New dithieno[3,2-b:2′,3′-d]thiophene oligomers as promising materials for organic field-effect transistor applications

Synthetic Metals

Volumn 146, Issue 3, 2004, Pages 251-257

  Iosip, M D ^a,b   Destri, S ^c   Pasini, M ^c   Porzio, W ^c   Pernstich, K P ^d   Batlogg, B ^d  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b PETRU PONI INSTITUTE OF MACROMOLECULAR CHEMISTRY   (Romania)

^c CNR   (Italy)

^d ETH ZURICH   (Switzerland)

Author keywords

Organic field effect transistor; Organic semiconductor; Vacuum evaporated film

Indexed keywords

ELECTRODES; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; MOLECULAR STRUCTURE; SEMICONDUCTING ORGANIC COMPOUNDS; SYNTHESIS (CHEMICAL); THIN FILMS;

COUPLING REACTIONS; ELECTRONIC ENERGY; REVERSE OXIDATION; VACUUM-EVAPORATED FILMS;

OLIGOMERS;

EID: 9344227929     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2004.08.004     Document Type: Conference Paper

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