Single crystal diamond M-i-P diodes for power electronics

IET Circuits, Devices and Systems

Volumn 1, Issue 5, 2007, Pages 380-386

  Brezeanu, M ^a   Butler, T ^a   Rupesinghe, N ^a   Rashid, S J ^a   Avram, M ^b   Amaratunga, G A J ^a   Udrea, F ^a   Dixon, M ^c   Twitchen, D ^c   Garraway, A ^d   Chamund, D ^d   Taylor, P ^d  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b R and D in Microtechnology (IMTBucharest)   (Romania)

^c ELEMENT SIX LTD   (United Kingdom)

^d DYNEX SEMICONDUCTOR LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SINGLE CRYSTALS; THERMAL EFFECTS;

HIGH POWER APPLICATIONS; POWER ELECTRONIC CIRCUITS; SINGLE CRYSTAL DIAMOND; UNIPOLAR DIAMOND DEVICES;

DIODES;

EID: 36248961533     PISSN: 1751858X     EISSN: None     Source Type: Journal    
DOI: 10.1049/iet-cds:20060379     Document Type: Article

References (17)

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