Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd:YAG laser

Applied Optics

Volumn 46, Issue 25, 2007, Pages 6273-6276

  Huang, Y P ^a   Liang, H C ^a   Huang, J Y ^a   Su, K W ^a   Li, A ^a   Chen, Y F ^a   Huang, K F ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LASER PULSES; MIRRORS; PUMPING (LASER); Q SWITCHING;

BRAGG MIRROR STRUCTURE; PULSE ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 36148985700     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.46.006273     Document Type: Article

References (18)

1. W. Koechner, Solid-State Laser Engineering, 5th ed., Vol. 1 of Optical Sciences (Springer, 1999).
2. 00 mode from a laser-diode end-pumped Nd:YAG laser," Opt. Lett. 17, 1003-1005 (1992).
3. 5," Appl. Phys. B 65, 789-902 (1997).
4. T. Y. Fan and R. L. Byer, "Modeling and cw operation of a quasi-three-level lasers 946 nm Nd:YAG laser," IEEE J. Quantum Electron. 23, 605-612 (1987).
5. T. Y. Fan, "Optimizing the efficiency and stored energy in quasi-three-level lasers," IEEE J. Quantum Electron. 28, 2692-2697 (1992).
6. T. Kellner, F. Heine, G. Huber, and S. Kuck, "Passive Q-switching of a diode-pumped 946-nm Nd:YAG with 1.6-W average output power," Appl. Opt. 37, 7076-7079 (1998).
7. L. Zhang, C. Y. Li, B. H. Feng, Z. Y. Wei, D. H. Li, P. M. Lu, and Z. G. Zhang, "Diode-pumped passive Q-switched 946-nm Nd:YAG laser with 2.1-W average output power," Chin. Phys. Lett. 22, 1420-1422 (2005).
8. S. M. Wang, Q. L. Zhang, L. Zhang, C. Y. Zhang, D. X. Zhang, B. H. Feng, and Z. G. Zhang, "Diode-pumped passively Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber," Chin. Phys. Lett. 23, 619-621 (2006).
9. 4," Appl. Opt. 40, 1979-1982 (2001).
10. 4+:YAG at 946 and 914 nm," Opt. Mater. 26, 293-296 (2004).
11. S. Johansson, S. Bjurshagen, C. Canalias, V. Pasiskevicius, and F. Laurell, "An all solid-state UV source based on a frequency quadrupled, passively Q-switched 946 nm laser," Opt. Express 15, 449-458 (2007).
12. G. J. Spühler, R. Paschotta, R. Fluck, B. Braun, M. Moser, G. Zhang, E. Gini, and U. Keller, "Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers," J. Opt. Soc. Am. B 16, 376-388 (1999).
13. J. Y. Huang, H. C. Liang, K. W. Su, H. C. Lai, Y. F. Chen, and K. F. Huang, "InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm," Appl. Opt. 46, 239-242 (2007).
14. F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
15. S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-&mu:m laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
16. T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001).
17. M. J. Lederer, V. Kolev, B. Luther-Davies, H. H. Tan, and C. Jagadish, "Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking," J. Phys. D 34, 2455-2464 (2001).
18. G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001).