Diode-pumped passive Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber

Chinese Physics Letters

Volumn 23, Issue 3, 2006, Pages 619-621

  Wang, Su Mei ^a   Zhang, Qiu Lin ^b   Zhang, Ling ^a   Zhang, Chun Yu ^a   Zhang, Dong Xiang ^a   Feng, Bao Hua ^a   Zhang, Zhi Guo ^a  

^a INSTITUTE OF PHYSICS   (China)

^b HEBEI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; NEODYMIUM LASERS; PULSE REPETITION RATE; PUMPING (LASER); Q SWITCHING; SEMICONDUCTING GALLIUM; YTTRIUM ALUMINUM GARNET;

AVERAGE OUTPUT POWER; DIODE-PUMPED; GAAS SATURABLE ABSORBER; INCIDENT PUMP POWER; ND:YAG LASER; PASSIVE Q-SWITCHED; PULSE DURATIONS; REPETITION RATE; SLOPE EFFICIENCIES;

SATURABLE ABSORBERS;

EID: 33644596980     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/3/026     Document Type: Article

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