Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD

Thin Solid Films

Volumn 516, Issue 2-4, 2007, Pages 374-377

  Chang, Ta Shan ^a   Chang, Ting Chang ^b,d   Liu, Po Tsun ^c,e   Tsao, Shu Wei ^b   Yeh, Feng Sheng ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^e NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

HSQ; Low k; Passivation; TFT

Indexed keywords

AMORPHOUS SILICON; HYDROGEN BONDS; LIQUID CRYSTAL DISPLAYS; MOLECULAR STRUCTURE; THIN FILM TRANSISTORS;

BACK CHANNEL; DENSITY OF STATES; LOW-K PASSIVATION MATERIAL;

PASSIVATION;

EID: 36049039177     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.08.014     Document Type: Article

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