Interstitial carbon-related defects in Si1-xGex alloys

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 200-204

  Khirunenko, L I ^a   Pomozov, Yu V ^a   Sosnin, M G ^a   Duvanskii, A ^a   Torres, V J B ^b   Coutinho, J ^b   Jones, R ^c   Briddon, P R ^d   Abrosimov, N V ^e   Riemann, H ^e  

^a INSTITUTE OF PHYSICS   (Ukraine)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c UNIVERSITY OF EXETER   (United Kingdom)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

^e LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Annealing; Carbon; Group IV and compounds; Irradiation

Indexed keywords

ABSORPTION SPECTRA; ANNEALING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; IRRADIATION;

DENSITY-FUNCTIONAL PSEUDOPOTENTIAL; LOWER TEMPERATURE; STRUCTURE OF BANDS;

SILICON ALLOYS;

EID: 36048998513     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.146     Document Type: Article

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