CMOS Monolithic Active Pixel Sensors (MAPS): Developments and future outlook

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 582, Issue 3, 2007, Pages 866-870

  Turchetta, R ^a   Fant, A ^a   Gasiorek, P ^a   Esbrand, C ^b   Griffiths, J A ^b   Metaxas, M G ^b   Royle, G J ^b   Speller, R ^b   Venanzi, C ^b   van der Stelt, P F ^c   Verheij, H ^c   Li, G ^c   Theodoridis, S ^d   Georgiou, H ^d   Cavouras, D ^e   Hall, G ^f   Noy, M ^f   Jones, J ^f   Leaver, J ^f   Machin, D ^f   Greenwood, S ^f   Khaleeq, M ^f   Schulerud, H ^g   Ostby J M ^g   Triantis, F ^h   Asimidis, A ^h   Bolanakis, D ^h   Manthos, N ^h   Longo, R ⁱ   Bergamaschi, A ⁱ   more..

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF AMSTERDAM   (Netherlands)

^d UNIVERSITY OF ATHENS   (Greece)

^e UNIVERSITY OF WEST ATTICA   (Greece)

^f IMPERIAL COLLEGE LONDON   (United Kingdom)

^g SINTEF   (Norway)

^h UNIVERSITY OF IOANNINA   (Greece)

ⁱ UNIVERSITY OF TRIESTE   (Italy)

Author keywords

CMOS; Imaging; Pixel; Sensors

Indexed keywords

CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; DIGITAL CAMERAS; IMAGE SENSORS; RADIATION HARDENING;

IMAGING DEVICES; MONOLITHIC ACTIVE PIXEL SENSORS (MAPS); WEB-CAMS;

ELECTRIC INSULATORS;

EID: 36048981548     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.07.112     Document Type: Article

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