Development of a thinned back-illuminated CMOS active pixel sensor for extreme ultraviolet spectroscopy and imaging in space science

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 573, Issue 1-2, 2007, Pages 250-252

  Waltham, N R ^a   Prydderch, M ^a   Mapson Menard, H ^a   Pool, P ^b   Harris, A ^b  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b E2V TECHNOLOGIES   (United Kingdom)

Author keywords

Active pixel sensor; APS; CMOS; EUV

Indexed keywords

CMOS INTEGRATED CIRCUITS; IMAGE ANALYSIS; LIGHTING; SILICON WAFERS; ULTRAVIOLET SPECTROSCOPY;

ACTIVE PIXEL SENSORS (APS); BACK ILLUMINATED CMOS; EXTREME ULTRAVIOLET SPECTROSCOPY; REAR ILLUMINATION TECHNIQUES;

IMAGE SENSORS;

EID: 33847796799     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.10.259     Document Type: Article

References (3)

1. Waltham N.R., Eyles C., Mapson-Menard H., Burt D., Bell R., and Pool P. Nucl. Instrum. and Meth. A 512 (2003) 358
2. M. Prydderch, N. Waltham, Q. Morrissey, R. Turchetta, P. Pool. A large area CMOS monolithic active pixel sensor for extreme ultra violet spectroscopy and imaging, in: Proceedings of SPIE Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications V, vol. 5301, San Jose, 2004, pp. 175-185.
3. B. Pain, G. Yang, T.J. Cunningham, C. Wrigley, H. Hancock, IEEE Trans. Electron Dev. ED vol. 50 (1) (2003) 48.