A 512 × 512 CMOS Monolithic Active Pixel Sensor with integrated ADCs for space science

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 512, Issue 1-2, 2003, Pages 358-367

  Prydderch, M L ^a   Waltham, N J ^a   Turchetta, R ^a   French, M J ^a   Holt, R ^a   Marshall, A ^a   Burt, D ^b   Bell, R ^b   Pool, P ^b   Eyles, C ^c   Mapson Menard, H ^c  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b E2V TECHNOLOGIES   (United Kingdom)

^c UNIVERSITY OF BIRMINGHAM   (United Kingdom)

Author keywords

10 bit single slope ADC; CMOS; I2C; Monolithic Active Pixel Sensor

Indexed keywords

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; DIODES; SUBSTRATES;

PIXEL SENSORS;

SILICON SENSORS;

EID: 19244372792     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01914-4     Document Type: Conference Paper

References (6)

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3. R. Turchetta, M. French, S. Manolopoulos, M. Tyndel, P. Allport, R. Bates, V. O'Shea, G. Hall, M. Raymond, Monolithic Active Pixel Sensors (MAPS) in a VLSI CMOS Technology, Presented at Vertex 2001, Bruennen, Switzerland, September 2001, pp. 23-28, Nucl. Instr. and Methods A 501 (2003) 251.
4. B. Dierickx, G. Meynants, D. Scheffer, Near 100% fill factor CMOS active pixels, Extended programme of the 1997 IEEE CCD & Advanced Image Sensors Workshop, Brugge, Belgium.
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6. http://www-isl.stanford.edu/̃abbas/group/, Introduction to Digital Image Sensor and Digital Cameras.