Comparison of efficiencies of different surface passivations applied to crystalline silicon

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 585-590

  Palais, O ^a   Lemiti, M ^b   Lelievre, J F ^b   Martinuzzi, S ^a  

^a CNRS   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Lifetime; Mapping; Microwave phase shift; SiNx:H; Surface passivation

Indexed keywords

EFFICIENCY; MAPPING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

ANTI-REFLECTION LAYERS; CRYSTALLINE SILICONS; LIFETIME; MICROWAVE PHASE SHIFT; PHOSPHORUS DIFFUSION; SINX:H; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

PASSIVATION;

EID: 36048981211     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.585     Document Type: Conference Paper

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