Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 650-653

  Ohno, Y ^a   Taishi, T ^a   Yonenaga, I ^a   Ichikawa, S ^b   Hirai, R ^b   Takeda, S ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Molecular beam epitaxy; Stacking faults; Transmission electron microscopy; ZnSe

Indexed keywords

LIGHTING; MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY; ZINC COMPOUNDS;

PHOTO-MOLECULAR BEAM; PHOTON ENERGY; SHOCKLEY-TYPE STACKING FAULTS;

STACKING FAULTS;

EID: 36048977271     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.09.043     Document Type: Article

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