Fabrication and characterization of strained Si material using SiGe virtual substrate for high mobility devices

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 28, Issue 10, 2007, Pages 1518-1522

  Liang, Renrong ^a   Zhang, Kan ^a   Yang, Zongren ^a   Xu, Yang ^a   Wang, Jing ^a   Xu, Jun ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Mobility enhancement; RPCVD; SiGe virtual substrate; Strained Si

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON TRANSITIONS; SECONDARY ION MASS SPECTROMETRY; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

MOBILITY ENHANCEMENT; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION (RPCVD); STRAINED SI;

MOSFET DEVICES;

EID: 35948990038     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

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