Influence of electromechanical boundary conditions on elasticity of zinc oxide nanowires

Applied Physics Letters

Volumn 91, Issue 18, 2007, Pages

  Desai, A V ^a   Haque, M A ^a  

^a The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; ELASTIC MODULI; ELASTICITY; ELECTROMECHANICAL COUPLING; MICROFABRICATION; ZINC OXIDE;

ELECTRICAL BOUNDARY CONDITIONS; MICROFABRICATED TOOLS; ZINC OXIDE NANOWIRES;

NANOWIRES;

EID: 35649006782     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2805027     Document Type: Article

References (27)

1. A. V. Desai and M. A. Haque, Sens. Actuators, A 134, 169 (2007).
2. H. Ni and X. Li, Nanotechnology 17, 3591 (2006).
3. J. Song, X. Wang, E. Riedo, and Z. L. Wang, Nano Lett. 5, 1954 (2005).
4. R. E. Miller and V. B. Shenoy, Nanotechnology 11, 139 (2000).
5. Z. L. Wang and J. H. Song, Science 312, 242 (2006).
6. J. Song, J. Zhou, and Z. L. Wang, Nano Lett. 6, 1656 (2006).
7. Z. Wang, A. P. Suryavanshi, and M.-F. Yu, Appl. Phys. Lett. 89, 082903 (2006).
8. J. Wang, C. S. Sandu, E. Colla, Y. Wang, W. Ma, R. Gysel, H. J. Trodahl, N. Setter, and M. Kuball, Appl. Phys. Lett. 90, 133107 (2007).
9. P. Yang, H. Yan, S. Mao, R. Russo, J. Johnson, R. Saykally, N. Morris, J. Pham, R. He, and H.-J. Choi, Adv. Funct. Mater. 12, 323 (2002).
10. B. A. Samuel, A. V. Desai, and M. A. Haque, Sens. Actuators, A 127, 155 (2005).
11. I. B. Kobiakov, Solid State Commun. 35, 305 (1980).
12. Standards Committee of the IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society, IEEE Standard on Piezoelectricity (IEEE, New York, 1987), pp. 11-14, 42-48.
13. Q. Xiong, N. Duarte, S. Tadigadapa, and P. C. Eklund, Nano Lett. 6, 1904 (2006).
14. K. R. Virwani, A. P. Malshe, W. F. Schmidt, and D. K. Sood, Smart Mater. Struct. 12, 1028 (2003).
15. A. San Paulo, J. Bokor, R. T. Howe, R. He, P. Yang, D. Gao, C. Carraro, and R. Maboudian, Appl. Phys. Lett. 87, 053111 (2005).
16. J. C. Phillips, Bonds and Bands in Semiconductors (Academic, New York, 1973), p. 42.
17. R. M. Martin, Phys. Rev. B 1, 4005 (1970).
18. M. J. P. Musgrave and J. A. Pople, Proc. R. Soc. London, Ser. A 268, 474 (1962).
19. A. Sakamoto and T. Ogawa, J. Phys. Chem. Solids 36, 583 (1975).
20. R. Kato and J. Hama, J. Phys.: Condens. Matter 6, 7617 (1994).
21. J. F. Nye, Physical Properties of Crystals: Their Representation by Tensors and Matrices (Oxford University Press, Oxford, 1985), p. 340.
22. J. C. Phillips and J. A. Van Vechten, Phys. Rev. Lett. 23, 1115 (1969).
23. A. Dal Corso, M. Posternak, R. Resta, and A. Baldereschi, Phys. Rev. B 50, 10715 LP (1994).
24. T. Ogawa, Jpn. J. Appl. Phys. 10, 72-& (1971).
25. G. Bester, X. Wu, D. Vanderbilt, and A. Zunger, Phys. Rev. Lett. 96, 187602 (2006).
26. J. Y. Fu, P. Y. Liu, J. Cheng, A. S. Bhalla, and R. Guo, Appl. Phys. Lett. 90, 212907 (2007).
27. A. J. Kulkarni, K. Sarasamak, S. Limpijumnong, and M. Zhou, Philos. Mag. 87, 2117 (2007).