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Journal of Crystal Growth

Volumn 280, Issue 1-2, 2005, Pages 222-226

Characterization of stress induced in SOS and Si/γ-Al 2O3/Si heteroepitaxial thin films by Raman spectroscopy

(5) Wang, Qi Yuan a Wang, Jun a Wang, Jian Huan a Liu, Zhong Li a Lin, Lan Ying a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

A1. Raman spectra; A1. Stress; A3. Heteroepitaxial films; B1. Sapphire; B2. Semiconductor silicon

Indexed keywords

EPITAXIAL GROWTH; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SAPPHIRE; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EXPANSION;

HETEROEPITAXIAL THIN FILMS; LATTICE MISMATCHING; SILICON ON SAPPHIRE (SOS); SOLID PHASE EPITAXY (SPE);

THIN FILMS;

EID: 19944419791 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.03.056 Document Type: Article

Times cited : (7)

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