Hot-electron effects in strongly localized doped silicon at low temperature

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 15, 2007, Pages

  Galeazzi, M ^a,d   Liu, D ^a   McCammon, D ^a   Rocks, L E ^a   Sanders, W T ^a   Smith, B ^a   Tan, P ^a   Vaillancourt, J E ^a   Boyce, K R ^b   Brekosky, R P ^b   Gygax, J D ^b   Kelley, R L ^b   Kilbourne, C A ^b   Porter, F S ^b   Stahle, C M ^b   Szymkowiak, A E ^c  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

^c Yale University   (United States)

^d University of Miami   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35448936016     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.155207     Document Type: Article

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