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Volumn 57, Issue 8, 1998, Pages 4472-4481

Non-Ohmic effects in hopping conduction in doped silicon and germanium between 0.05 and 1 K

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Indexed keywords


EID: 0000344585     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.4472     Document Type: Article
Times cited : (52)

References (40)
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    • 0542446120 scopus 로고
    • Sh. M. Kogan and B. I. Shklovskii, Fiz. Tekh. Poluprovodn. 15, 1049 (1981) [Sov. Phys. Semicond. 15, 605 (1981)].
    • (1981) Sov. Phys. Semicond. , vol.15 , pp. 605
    • Shklovskii, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.