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Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 8, 1998, Pages 4472-4481

Non-Ohmic effects in hopping conduction in doped silicon and germanium between 0.05 and 1 K

(8) Zhang, J a Cui, W a Juda, M a McCammon, D a Kelley, R b Moseley, S b Stahle, C b Szymkowiak, A b

a University of Wisconsin Madison (United States)

b NASA GODDARD SPACE FLIGHT CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000344585 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.57.4472 Document Type: Article

Times cited : (52)

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