Temperature dependence of photoluminescence in non-crystalline silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5349, Issue , 2004, Pages 454-462

  Serpengüzel, Ali ^a   Bilici, Temel ^a,c   Inanç, Ibrahim ^a,d   Kurt, Adnan ^a   Carey, Jim ^b   Mazur, Eric ^b  

^a KOÇ UNIVERSITY   (Turkey)

^b HARVARD UNIVERSITY   (United States)

^c Boston University   (United States)

^d BOGAZICI UNIVERSITY   (Turkey)

Author keywords

Amorphous silicon; Black silicon; Non crystalline silicon; Photoluminescence; Plasma enhanced chemical vapor deposition; Porous silicon

Indexed keywords

CRYSTALLINE MATERIALS; INTEGRATED OPTICS; LIGHT AMPLIFIERS; LIGHT EMISSION; MICROELECTRONICS; NONCRYSTALLINE SOLIDS; OPTICAL WAVEGUIDES; OPTIMIZATION; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON;

AMORPHOUS SILICON FILMS; BLACK SILICON; NON-CRYSTALLINE SILICON; POROUS SILICON FILMS;

PHOTOLUMINESCENCE;

EID: 3543117236     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.529549     Document Type: Conference Paper

References (40)

1. H. Zimmermann, "Integrated Silicon Optoelectronics," (Springer Verlag, Berlin, 2000) pp. 1-352.
2. B. Jalali, S. Yegnanarayanan, T. Yoon, T. Yoshimoto, I. Rendina, and F. Coppinger, "Advances in Silicon on insulator Optoelectronics," IEEE J. Select. Topics in Quantum Electron. 4, 938 (1998).
3. A. Kaneko, T. Goh, H. Yamada, T. Tanaka, and I. Ogawa "'Design and applications of silica-based planar lightwave circuits," IEEE J. Select. Topics in Quantum Electron. 5, 1227 (1999).
4. B. J. Offrein, R. Germann, F. Horst, H.W.M. Salemink, R. Beyerl, and G. L. Bona, "Resonant coupler-based tunable add-after-drop filter in silicon-oxynitride technology for WDM networks," IEEE J. Select. Topics in Quantum Electron. 5, 1400 (1999).
5. J.D. Joannopoulos and G. Lucovsky, "The physics of hydrogenated amorphous silicon," (Springer Verlag, Berlin, 1984).
6. S. Perkowitz, "Optical Characterization of Semiconductors," (Academic Press, London, 1993), p.27.
7. P. Shaoqi and D. Xiaoning, "Properties of Sputtered Amorphous Silicon without Hydrogen", in "Proceedings of the International Workshop on Amorphous Semiconductors," H. Fritzsche, D. Han, C. C. Tsai, Eds. (World Scientific, Singapore, 1987).
8. J. I. Panvoke, "Luminescence in Hydrogenated Amorphous Silicon", in "Proceedings of the International Workshop on Amorphous Semiconductors," H. Fritzsche, D. Han, C. C. Tsai, Eds., (World Scientific, Singapore, 1987).
9. R. A. Street, Ed., "Technology and Applications of Amorphous Silicon," (Springer Verlag, Berlin, 2000), pp. 1-403.
10. A. M. Agarwal, L. Liao, J. S. Foresi, M. R. Black, X. Duan, and L.C. Kimerling, "Low-loss Polycrystalline Silicon Waveguides for Silicon Photonics," J. Appl. Phys. 80, 6120 (1996).
11. A. Serpengüzel, A. Aydinli, and A. Bek, "Enhancement and inhibition of photoluminescence in hydrogenated amorphous silicon nitride microcavities," Optics Express 1, 108 (1997).
12. M. H. Brodsky, "Quantum Well Model of the Hydrogenated Amorphous Silicon," Solid State Commun. 36, 55-59 (1980).
13. A. Serpengüzel, A. Aydinli, A. Bek, and M. Güre, "Visible photoluminescence from planar amorphous silicon nitride microcavities, " J. Opt. Soc. Am. B. 15, 2706 (1998).
14. D. J. Wolford, B. A. Scoot, J. A. Reimer and J. A. Bradley, "Efficient visible luminescence from hydrogenated amorphous silicon," Physica B 117, 920 (1983).
15. T. Canham, "Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers," Appl. Phys. Lett. 57, 1046 (1990).
16. D. J. Lockwood, "Optical Properties of Porous Silicon," Solid State Commun. 92, 101 (1994).
17. L. Pavesi, C. Mazolleni, A. Tredicucci, and V. Pellegrini, "Controlled photon emission in porous silicon microcavities," Appl. Phys. Lett. 67, 3280 (1995).
18. L. Pavesi and V. Mulloni, "All porous silicon microcavities: growth and physics," J. Lumin. 80, 43 (1999).
19. M. Araki, H. Koyama, and N. Koshida, "Precisely tuned emission from porous silicon vertical optical cavity in the visible region," J. Appl. Phys. 80, 4841 (1996).
20. M. Cazzanelli and L. Pavesi, "Time-resolved photoluminescence of all porous silicon microcavities," Phys. Rev. B 56, 15264 (1997).
21. E. K. Squire, P. A. Snow, P. St. J. Russell, L. T. Canham, A. J. Simmons, and C. L. Reeves, "Light emission from porous silicon single and multiple cavities," J. Lumin. 80, 125 (1999).
22. M. Takahashi, Y. Toriumi, T. Matsumoto, Y. Masumoto, N. Koshida, "Significant photorefractive index change observed in porous silicon Fabry-Perot resonators," Appl. Phys. Lett. 76, 1990 (2000).
23. S. Setzu, S. Letant, P. Solsona, R. Romestain, and J. C. Vial, " Improvement of luminescence in p-type as-prepared or dye impregnated porous silicon microcavities," J. Lumin. 80, 129 (1999).
24. Z. H. Xiong, S. Yuan, Z. M. Jiang, J. Qin, C. W. Pei L. S. Liao, X. M. Ding, X. Y. Hou, and X. Wang, "Photoluminescence studies of porous silicon microcavities," J. Lumin. 80, 137 (1999).
25. E. K. Squire, P. St. J. Russell, and P. A. Snow, "Optimized light emission from layered porous silicon structures," Appl. Opt. 37, 7107 (1998).
26. V. Mulloni and L. Pavesi, "Porous silicon microcavities as optical chemical sensors," Appl. Phys. Lett. 76, 2523 (1999).
27. A. Arena, S. Patane, G. Saitta, S. Savasta, R. Girlanda, and R. Rinaldi, "Silicon based organic-inorganic microcavity and its dispersion curve from angle resolved photoluminescence," Appl. Phys. Lett. 72, 2571 (1998).
28. B. T. Sullivan, D. J. Lockwood, H. J. Labbe, and Z.-H. Lu, "Photoluminescence in Amorphous Si/SiOx Superlattices Fabricated by Magnetron Sputtering," Appl. Phys. Lett. 69, 3149 (1996).
29. D. J. Lockwood, J.M. Baribeau, and B. T. Sullivan, "Visible light from Si/SiOx superlattices in planar microcavities," J. Vac. Sci. Technol. B 16, 1707 (1998).
30. D. J. Lockwood, B. T. Sullivan, and H. J. Labbe, "Visible light emission from Si/SiOx superlattices in optical microcavities," J. Lumin 80, 75 (1999).
31. K. M. Cheng, A. W. Sparks, H.-C. Luan, D. R. Lim, K. Wada, and L. C. Kimerling, "SiO2/TiO2 omnidirectional reflector and resonator with sol-gel method," Appl. Phys. Lett. 75, 3805 (1999).
32. F. Hamelmann, G. Haindl, J. Schmalhorst, A. Aschentrup, E. Majkova, U. Kleineberg, U. Heinzmann, A. Klipp, P. Jutzi, A. Anopchenko, M. Jergel, and S. Luby, "Metal oxide / silicon oxide multilayer with smooth interfaces produced by in situ controlled plasma enhanced MOCVD," Thin Solid Films 358, 90 (2000).
33. L. Pavesi, R. Guardini, and C. Mazolleni, "Porous Silicon Resonant Cavity Light Emitting Diodes," Solid State Commun. 97, 1051 (1996).
34. M. Araki, H. Koyama, and N. Koshida, "Controlled electroluminescence spectra of porous silicon diodes with vertical optical cavity," Appl. Phys. Lett. 69, 2956 (1996).
35. D. Hunkel, R. Butz, R. Ares-Fisher, M. Marso, and H. Lüth, "Interference filters from porous silicon with laterally varying wavelength of reflection," J. Lumin. 80, 133 (1999).
36. H. F. Arrand, T. M. Benson, P. Sewell, and A. Loni, "Optical waveguides in porous silicon pre-patterned by localized nitrogen implantation," J. Lumin. 80, 199 (1999).
37. S. W. Leonard, H. M. van Driel, K. Busch, S. John, A. Birner, A.-P. Li, F. Müller, U Gösele, and V. Lehmann, "Attenuation of optical transmission within the band gap of thin two-dimensional macroporous silicon photonic crystals," Appl. Phys. Lett. 75, 3063 (1999).
38. M. C. Netti, M. D. B. Charlton, G. J. Parker, and J. J. Baumberg, "Visible photonic band gap engineering in silicon nitride waveguides," Appl. Phys. Lett. 76, 991 (2000).
39. Tsing-Hua Her, Richard J. Finlay, Claudia Wu, and Eric Mazur, "Femtosecond laser-induced formation of spikes on silicon", Appl. Phys. A 70, 383-385 (2000);
40. Tsing-Hua Her, Richard J. Finlay, Claudia Wu, Shrenik Deliwala, and Eric Mazur, "Microstructuring of silicon with femtosecond laser pulses", Appl. Phys. Lett. 73, 1673-1675 (1998).