Contact resistance of InGaN/GaN light emitting diodes grown on the production model multi-wafer MOVPE reactor

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Chuang, R W ^a   Zou, A Q ^a   Lee, H P ^a   Dong, Z J ^b   Xiong, F F ^b   Shih, R ^b   Bremser, M ^c   Juergensen, H ^d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Alpha Photonics Inc   (United States)

^c AIXTRON Inc   (United States)

^d AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; HEAT TRANSFER; INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SINGLE CRYSTALS;

STRUCTURAL QUALITY; SYMMETRIC FLOW; X RAY ROCKING CURVES;

SEMICONDUCTING FILMS;

EID: 3543084046     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300003288     Document Type: Conference Paper

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