Phenomenological model of the piezoresistive effect in polysilicon films

Russian Microelectronics

Volumn 32, Issue 4, 2003, Pages 205-213

  Gridchin, V A ^a   Lubimsky, V M ^a  

^a NOVOSIBIRSK STATE TECHNICAL UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELASTIC MODULI; ELECTRIC RESISTANCE; GRAIN GROWTH; GRAIN SIZE AND SHAPE; MICROELECTROMECHANICAL DEVICES; OXIDATION; POLYSILICON; STRAIN; STRESSES;

ELASTIC CONSTANTS; PIEZORESISTIVE EFFECTS; POLYSILICON FILMS;

THIN FILMS;

EID: 3543063981     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1024567213980     Document Type: Article

References (20)

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