9-W output power from an 808-nm tapered diode laser in pulse mode operation with nearly diffraction-limited beam quality

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 13, Issue 5, 2007, Pages 1194-1199

  Dittmar, Frank ^b   Klehr, Andreas ^b   Sumpf, Bernd ^b   Knauer, Arne ^b   Fricke, Jörg ^b   Erbert, Götz ^a,b   Tränkle, Günther ^a,b  

^a IEEE

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

808 nm tapered diode lasers; High brightness; Narrow vertical far field; Pulse excitation; Semiconductor laser; Tapered laser

Indexed keywords

BEAM QUALITY; CONVERGENCE OF NUMERICAL METHODS; DIFFRACTION EFFICIENCY; ELECTRONIC STRUCTURE; LASER EXCITATION;

NARROW VERTICAL FAR FIELDS; PULSE EXCITATION; TAPERED DIODE LASERS; TAPERED LASERS;

SEMICONDUCTOR LASERS;

EID: 35348990855     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2007.902838     Document Type: Conference Paper

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