EELS analysis of {1 1 1} Σ3 and {1 1 2} Σ3 twin boundaries and their junctions in phosphor-doped cast polycrystalline silicon

Solar Energy Materials and Solar Cells

Volumn 92, Issue 1, 2008, Pages 71-75

  Kuchiwaki, Isamu ^a   Sugio, Kenjiro ^a   Yanagisawa, Osamu ^a   Fukushima, Hiroshi ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Electron energy loss spectroscopy; Multicrystalline; Silicon

Indexed keywords

CRYSTAL IMPURITIES; ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS;

GRAIN BOUNDARY JUNCTION; IMPURITY EFFECTS; LOCAL ELECTRICAL PROPERTIES;

SILICON;

EID: 35348959874     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2007.09.002     Document Type: Article

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