Boron diffusion in compressively stressed float zone-silicon induced by Si3N4 films

Journal of the Electrochemical Society

Volumn 145, Issue 1, 1998, Pages 258-264

  Zaitsu, Y ^a   Shimizu, T ^a   Takeuchi, J ^a   Matsumoto, S ^a   Yoshida, M ^b   Abe, T ^c   Arai, E ^d  

^a KEIO UNIVERSITY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c SHIN ETSU CHEMICAL CO LTD   (Japan)

^d NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CHEMICAL VAPOR DEPOSITION; PLASMA APPLICATIONS; SILICON NITRIDE; STRESSES; TEMPERATURE;

COMPRESSIVE STRAIN; FLOAT ZONE SILICON; INTERSTITIAL MEDIATED DIFFUSION;

DIFFUSION IN SOLIDS;

EID: 0031699632     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838244     Document Type: Article

References (21)

1. M. Tamura and H. Sunami, Jpn. J. Appl. Phys., 8, 1097 (1972)
2. S. T. Ahn, H. W. Kennel, J. D. Plummer, and W. A. Tiller J. Appl. Phys., 64, 4914 (1988).
3. K. Osada, Y. Zaitsu, S. Matsumoto, M. Yoshida, E. Arai, and T. Abe, This Journal, 142, 202 (1995).
4. S. Matsuo and M. Kiuchi, Jpn. J. Appl. Phys., 22, 210 (1983).
5. P. A. Flinn, D. S. Gardner, and W. D. Nix, IEEE Trans. Electron Devices, ED-34, 689 (1987).
6. A. G. van Nie, Solid State Technology, 81 (Jan. 1991).
7. E. Kobeda and E. A. Irene, J. Vac. Sci. Technol., B5, 15 (1987).
8. T. F. Retajezyk, Jr. and A. K. Sinha, Thin Solid Films 70, 241 (1980).
9. P. Burkhardt and R. E. Marvel, This Journal, 116, 864 (1969).
10. E. Ibok, M. Santana, and S. Garg, in Silicon Nitride and Silicon Oxide Thin Insulating Films/1994, V. J. Kapoor and W. D. Brown, Editors, PV 94-16, p. 385, The Electrochemical Society Proceedings Series, Pennington, NJ (1994).
11. Y. Zaitsu, K. Osada, T. Shimizu, S. Matsumoto, M. Yoshida, E. Arai, and T. Abe, Mater. Sci. Forum, 196-201, 1891 (1995).
12. K. Osada, Y. Zaitsu, S. Matsumoto, S. Tanigawa, A. Uedono, M. Yoshida, E. Arai, and T. Abe, Extended Abstracts of 1994 International Conference on Solid State Devices and Materials, p. 739, The Japan Society of Applied Physics, Japan (1994).
13. P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner, R. D. Jacowitz, and T. I. Kamins, Appl. Phys. Lett., 62, 612 (1993).
14. N. Moriya, L. C. Feldman, H. S. Luftman, C. A. King, J. Bevk, and B. Freer, Phys. Rev. Lett., 71, 883 (1993).
15. N. E. B. Cowern, P. C. Zalm, P. van der Sluis, D. J. Gravesteijn, and W. B. de Boer, ibid., 72, 2585 (1994).
16. T. Y. Tan and U. Gösele, J. Appl. Phys. A, 37, 1 (1985).
17. P. A. Packan and J. D. Plummer, J. Appl. Phys., 68, 4327 (1990).
18. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys., 61, 289 (1989).
19. H. Park and M. E. Law, J. Appl. Phys., 72, 3431 (1992).
20. H. Zimmermann and H. Ryssel, This Journal, 139, 256 (1992).
21. M. Yoshida and S. Kanamori, Jpn. J. Appl. Phys., 9, 338 (1970).