Size tolerance of sub-resolution assist features for sub-50 nm node device

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6520, Issue PART 2, 2007, Pages

  Kim, Byung Sung ^a   Lee, Sung Ho ^a   Shin, Hong Jae ^a   Lee, Nae In ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

CD uniformity; Gate CD control; Main feature; Mask topography; Printability; RCWA simulation; SRAF; Sub resolution assist feature

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; ELECTROMAGNETIC FIELD EFFECTS; FITS AND TOLERANCES; PHOTOMASKS; TOPOGRAPHY; WAVELENGTH;

CD UNIFORMITY; GATE CD CONTROL; MAIN FEATURE; MASK TOPOGRAPHY; MEAN-TO-TARGET (MTT); PRINTABILITY; RCWA SIMULATION; SUB-RESOLUTION ASSIST FEATURE; SUB-RESOLUTION ASSIST FEATURES (SRAFS);

OPTICAL RESOLVING POWER;

EID: 35148867514     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.711922     Document Type: Conference Paper

References (5)

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2. S. Mansfield, L. Liebmann, A. Molless, and A. K. Wong, "Lithographic comparison of assist feature design strategies," Proc. SPIE, 4000, 63-76 (2000).
3. International Technology Roadmap for Semiconductors, 2006 Updated Edition, http://www.itrs.net/reports.html.
4. M. D. Smith, J. D. Byers, C. A. Mack, "The impact of mask topography on binary reticles at the 65nm node," Proc. SPIE, 5567, 416-424 (2004).
5. L. S. Melvin III, M. Drapeau, J. Huang, "Identification of sub-resolution assist features that are susceptible to imaging through process," Proc. SPIE, 6349, 63491Q (2006).