Challenges and first results of SiC Schottky diode manufacturing using a 3 inch technology

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 981-984

  Treu, M ^a   Rupp, R ^b   Brunner, H ^a   Dahlquist, F ^a   Hecht, Ch ^c  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

3 inch; Defect density; Epitaxy; Manufacturing; Schottky diode; Surface roughness

Indexed keywords

COSTS; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; GRAIN GROWTH; SCHOTTKY BARRIER DIODES; SURFACE ROUGHNESS;

DEFECT DENSITY; HOMOEPITAXY; POWER DEVICES; SCHOTTKY DIODES;

SILICON CARBIDE;

EID: 8644270546     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.981     Document Type: Conference Paper

References (3)

1. I. Zverev, M. Treu, H. Kapels, O. Helmund and R. Rupp: Proc. 9th Conf. Power Electronics and Applications (2001), p. DS2.1-6.
2. T. Kimoto, A. Itoh, H. Akita, T. Urushidani, S. Jang and H. Matsunami: Compound Semiconductors (1994), p. 437.
3. http://www.infineon.com/cmc_upload/documents/027/307/SDP_B_T10S30_1.pdf