Concentration of N and P in SiC investigated by time-of-flight secondary ion mass spectrometry (TOF-SIMS)

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 453-456

  Acarturk T ^a   Semmelroth, K ^b   Pensl, G ^b   Saddow, S E ^c   Starke, U ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c University of South Florida   (United States)

Author keywords

Concentration; Depth profiling; Detection limits; Dopants; Nitrogen; Phosphorous; SiC; SIMS; TOF SIMS

Indexed keywords

CONCENTRATION (PROCESS); DEPTH PROFILING; DOPING (ADDITIVES); NITROGEN;

DETECTION LIMITS; PHOSPHOROUS;

SILICON CARBIDE;

EID: 35148858104     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.453     Document Type: Conference Paper

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