SIMS analysis of epitaxial layers for power- and micro-electronics

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 1034-1039

  Svensson, B G ^a   Linnarsson, M K ^a   Cardenas, J ^a   Petravic M ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; ION BOMBARDMENT; MICROELECTRONICS; POWER ELECTRONICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SILICA; SILICON CARBIDE; SWELLING;

ION SPUTTERING;

NUCLEAR INSTRUMENTATION;

EID: 0032017213     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00791-X     Document Type: Article

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