Diffusion and adsorption behavior of Si adatom on defect-induced H-terminated Si(0 0 1) surfaces

Physica B: Condensed Matter

Volumn 400, Issue 1-2, 2007, Pages 287-291

  Zhu, X Y ^a,b   Huang, X J ^a  

^a SOOCHOW UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Adsorption; Diffusion; Empirical tight binding method; H terminated silicon surface; SDV

Indexed keywords

ABSORPTION; BINDING SITES; ENERGY BARRIERS; SILICON; SURFACE PROPERTIES;

DIFFUSION ENERGY BARRIERS; EMPIRICAL TIGHT BINDING METHODS; H-TERMINATED SILICON SURFACES;

ADATOMS;

EID: 35148847918     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.07.024     Document Type: Article

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