CDU minimization at the 45nm node and beyond -optical, resist and process contributions to CD control

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6520, Issue PART 3, 2007, Pages

  Scheer, Steven ^a   Carcasi, Mike ^a   Shibata, Tsuyoshi ^b   Otsuka, Takahisa ^b  

^a TOKYO ELECTRON AMERICA INC   (United States)

^b TOKYO ELECTRON LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ETCHING; MONTE CARLO METHODS; NUMERICAL METHODS; OPTIMIZATION; PARAMETER ESTIMATION; SCANNING;

CRITICAL DIMENSION; LITHOGRAPHY METRICS; PLATE UNIFORMITY; POST-EXPOSURE BAKE; PROCESS PARAMETERS; WAFER VARIATION;

PHOTOLITHOGRAPHY;

EID: 35148841018     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.711822     Document Type: Conference Paper

References (5)

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3. Markus Kagerer, Daniel Miller, Wayne Chang, Daniel J. Williams, "ArF Processing of 90-nm Design Rule Lithography Achieved Through Enhanced Thermal Processing", Proceedings of SPIE, Vol. 6153, 2006
4. Donis G. Flagello, Bill Arnold, Steve Hansen, Mircea Dusa, Robert Socha, Jan Mulkens, Rainer Garreis, "Optical Lithography in the sub-50nm regime", Proceedings of SPIE, Vol. 5377, 2004
5. Sabita Roy, J. Fung Chen, Armin Liebchen, Tom Laidig, Kurt Wampler, Uwe Hollerbach, "An Investigation of Model OPC Optimization Based on CD Uniformity Yield", Proceedings of SPIE, Vol. 5038, 2003