Interface reactions and electrical properties of Ta/4H-SiC contacts

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 713-716

  Cao, Y ^a   Perez Garcia S A ^a   Nyborg, L ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Depth profile; I V Characteristics; Interfacial reaction; Metal contact

Indexed keywords

DEPTH PROFILING; ION BEAMS; OHMIC CONTACTS; SILICON CARBIDE; SILICON WAFERS; SPUTTERING; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

AUGER ELECTRON SPECTROSCOPIES (AES); CONTACT PROPERTIES; GLANCING ANGLE X-RAY DIFFRACTIONS; INTERFACE REACTIONS; IV CHARACTERISTICS; LAYERED STRUCTURES; METAL CONTACTS; TANTALUM THIN FILM;

AUGER ELECTRON SPECTROSCOPY;

EID: 35148839049     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.713     Document Type: Conference Paper

References (6)

1. I.P. Nikitina, K.V. Vassilevski, N.G. Wright, A.B. Horsfall and A.G. O’Neill: J. Appl. Phys. Vol. 97 (2005), 083709.
2. Matthew H. Ervin, Kenneth A. Jones, Unchul Lee and Mark C. Wood: J. Vac. Sci. Technol. B Vol. 24 (2006), p. 1185.
3. J.S. Chen, E. Kolawa and M.-A. Nicolet: J. Appl. Phys. Vol. 76(1994), p. 2169.
4. J.O. Olowolafe, J.S. Solomon, W. Mitchel and W.V. Lampert: Thin Solid Films Vol. 479 (2005), p. 59.
5. R. Hübner, M. Hecker, N. Mattern, V. Hoffmann, K. Wetzig, H.-J. Engelmann and Z. Zschech: Anal. Bioanal. Chem. Vol. 379 (2004), p. 568.
6. S.Y. Han, K.H. Kim, J.K. Kim, H.W. Jang, K.H. Lee, N.-K. Kim, E.D. Kim and J.-L. Lee: Applied Physics Letters Vol. 79 (2001), p. 1816.