Thermal and electrical properties of Au/B4C, Ni/B4C, and Ta/Si contacts to silicon carbide

Thin Solid Films

Volumn 479, Issue 1-2, 2005, Pages 59-63

  Olowolafe, J O ^a   Solomon, J S ^b   Mitchel, W ^c   Lampert, W V ^d  

^a UNIVERSITY OF DELAWARE   (United States)

^b UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d U S ARMY RESEARCH OFFICE   (United States)

Author keywords

Boron carbide; Gold; Silicon carbide; Tantalum

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORON CARBIDE; ELECTRIC PROPERTIES; GOLD; MELTING; SILICON; SILICON CARBIDE; TANTALUM; THERMODYNAMIC PROPERTIES; VACUUM APPLICATIONS; X RAY DIFFRACTION ANALYSIS;

DEPTH PROFILING; MELTING POINT; PHASE IDENTIFICATION; ULTRA-HIGH VACUUM;

ELECTRIC CONTACTS;

EID: 15344342262     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.188     Document Type: Article

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