Strained M-plane GaN for polarization-sensitive applications

2007 Spanish Conference on Electron Devices, Proceedings

Volumn , Issue , 2007, Pages 250-253

  Rivera, C ^a,b   Misra, P ^c   Pau, J L ^b   Munoz E ^b   Brandt, O ^c   Grahn, H T ^c   Ploog, K H ^c  

^a IEEE

^b Polytechnic University of Madrid   (Spain)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

Band structure modification; Polarizationsensitivity; Strain; Ultraviolet detectors

Indexed keywords

ANISOTROPY; POLARIZATION; STRAIN; ULTRAVIOLET DETECTORS;

BAND-STRUCTURE MODIFICATION; POLARIZATIONSENSITIVITY;

GALLIUM NITRIDE;

EID: 35148830561     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCED.2007.384039     Document Type: Conference Paper

References (12)

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