M-plane GaN-based dichroic photodetectors

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 1, 2007, Pages 86-89

  Rivera, C ^a   Misra, P ^b   Pau, J L ^a   Munoz E ^a   Brandt, O ^b   Grahn, H T ^b   Ploog, K H ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; FILM THICKNESS; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; LIGHT POLARIZATION; PHOTODETECTORS; PHOTONS; THICK FILMS;

DETECTED LIGHT; DETECTOR DESIGN; M -PLANE GAN; POLARIZATION SENSITIVE; POLARIZED PERPENDICULAR; STRAIN STATE; VALENCE-BAND SPLITTING;

GALLIUM NITRIDE;

EID: 34547750453     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200673544     Document Type: Conference Paper

References (6)

1. P. Waltereit et al., Nature 406, 865 (2000).
2. S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Phys. Rev. B 65, 075202 (2002).
3. S. Ghosh, O. Brandt, H. T. Grahn, and K. H. Ploog, Appl. Phys. Lett. 81, 3380 (2002).
4. P. Waltereit et al., J. Cryst. Growth 218, 143 (2000).
5. T. Y. Liu, A. Trampert, Y. J. Sun, O. Brandt, and K. H. Ploog, Philos. Mag. Lett. 84, 435 (2004).
6. C. Rivera et al., Appl. Phys. Lett. 88, 213507 (2006).