Effect of high energy ion irradiation on silicon substrate in a pulsed plasma device

Applied Surface Science

Volumn 254, Issue 1 SPEC. ISS., 2007, Pages 197-200

  Bhuyan, H ^a   Favre, M ^a   Valderrama, E ^a   Avaria, G ^a   Guzman, F ^a   Chuaqui, H ^a   Mitchell, I ^b   Wyndham, E ^a   Saavedra, R ^c   Paulraj, M ^c  

^a PONTIFICIA UNIVERSIDAD CATÓLICA DE CHILE   (Chile)

^b Merchiston Castle School   (United Kingdom)

^c UNIVERSITY OF CONCEPCIÓN   (Chile)

Author keywords

Ion beam irradiation; Plasma focus; Silicon carbide

Indexed keywords

ATOMIC FORCE MICROSCOPY; ION BEAMS; ION BOMBARDMENT; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; TEMPERATURE MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

DIAGNOSTIC TOOLS; HIGH ENERGY ION IRRADIATIONS; PLASMA FOCUS (PF); SILICON SUBSTRATES;

PLASMA DEVICES;

EID: 35148825628     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.07.029     Document Type: Article

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