Strain and SiC particle formation in silicon implanted with carbon ions of medium fluence studied by synchrotron x-ray diffraction

Journal of Applied Physics

Volumn 86, Issue 8, 1999, Pages 4184-4187

  Eichhorn, F ^a   Schell, N ^a   Matz, W ^a   Kogler R ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000001478     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371344     Document Type: Article

References (20)

1. I. Ban, M. C. Ötztürk, and E. Demirlioglu, Proceedings of the 11th International Conference on Ion Implantation Technology, Austin, 1996 (IEEE, Piscataway, NJ), p. 740.
2. S. Nishikawa, A. Tanaka, and T. Yamaji, Appl. Phys. Lett. 60 2270 (1992).
3. R. Liefting, R. C. M. Wijburg, J. S. Custer, H. Wallinga, and F Saris, IEEE Trans. Electron Devices 41, 50 (1994).
4. H. Wong, N. W. Cheung, P. K. Chu, J. Liu, and J. W. Mayer, Appl. Phys. Lett 52, 1023 (1988).
5. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, Appl. Phys. 76, 1363 (1994).
6. U Preckwinkel, J. K. N. Lindner, B. Stritzker, and B. Rausehenbach, Nucl. Instrum. Methods Phys. Res. B 120, 125 (1996).
7. A. Nejim, P. I. E. Hemment, and J. Stoemenos, Appl. Phys. Lett. 66, 2646 (1995).
8. A. Romano-Rodriguez, C. Serre, L. Calvo-Barrio, A. Perez-Rodriguez, J. R. Morante, R. Kogler, and W. Skorupa, Mater. Sci. Eng., B 36, 282 (1996).
9. J. A. Borders, S. T. Picraux, and W. Beezhold, Appl. Phys. Lett. 18, 509 (1971).
10. C Serre, A. Perez-Rodriguez, A. Romano-Rodriguez, L. Calvo-Barro, J. R. Morante, J. Esteve, M. C. Acero, W. Skorupa, and R. Kögler, J. Electrochem. Soc. 144, 2211 (1997).
11. R. C. Newman, Mater. Res. Soc. Symp. Proc. 59, 403 (1985).
12. U. Gösele, Mater. Res. Soc. Symp. Proc. 59, 419 (1985).
13. K. J. Reesom, J. Stoemenos, and P. L. F. Hemment, Thin Solid Films 191, 147 (1990).
14. M. Deguchi, M. Kitabatake, T. Hirao, N. Arai, and T. Izumi, Jpn. J. Appl. Phys., Part 1 31, 343 (1992).
15. P. Werner, S. Eichler, G. Mariani, R. Kögler, and W. Skorupa, Appl. Phys. Lett. 70, 252 (1997).
16. T. B. Massalski, Binary Alloy Phase Diagrams (ASM International, Metals Park, OH, 1990), Vol. 1, p. 882
17. G. Davies and R. C. Newman, in Handbook of Semiconductors, edited by S. Mahajan (Elsevier, Amsterdam, 1994), Vol. 3. p. 1557.
18. W. Matz, F. Prokert, R. Schlenk, J. Claußner, N. Schell, F. Eichhorn, and G. Bernhard, The Rossendorf Beamline at the ESRF (Project ROBL), FZR-158, November 1996 (Forschungszentrum Rossendorf): ESRF Beamline Handbook, 4th ed. (Grenoble, January, 1997).
19. Computer code WIN-HRXRD, vers. 1.02 (Siemens 1994).
20. Landoldt-Börnstein, edited by O. Madelung (Springer, New York, 1982), Vol. 17.