SCOPUS 정보 검색 플랫폼

Sensors and Actuators, A: Physical

Volumn 92, Issue 1-3, 2001, Pages 191-196

Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications

(5) Boltovets, N S a Kholevchuk, V V b,c Konakova, R V b Mitin, V F b,c Venger, E F b

a State Enterprise Research Institute ORION (Ukraine)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

c MicroSensor Ltd (Ukraine)

Author keywords

Germanium films; Silicon diodes; Temperature sensors

Indexed keywords

DIODES; MAGNETIC FIELD EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; TEMPERATURE; THERMODYNAMIC STABILITY;

GERMANIUM FILM; TEMPERATURE SENSOR;

THERMOMETERS;

EID: 0035425863 PISSN: 09244247 EISSN: None Source Type: Journal
DOI: 10.1016/S0924-4247(01)00562-3 Document Type: Article

Times cited : (35)

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