Characterization of Si nanostructures using a noncontact mode scanning near-field optical Raman microscope, with 100 nm spatial resolution and 5 nm depth resolution, using ultraviolet resonant Raman scattering

Applied Physics Letters

Volumn 91, Issue 13, 2007, Pages

  Yoshikawa, M ^a   Murakami, M ^a   Ishida, H ^a  

^a TORAY RESEARCH CENTER INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; RAMAN SCATTERING; SILICA; SILICON; STRESS CONCENTRATION; STRESS MEASUREMENT; TENSILE STRESS;

SPATIAL RESOLUTION; ULTRAVIOLET RESONANT RAMAN SCATTERING;

NANOSTRUCTURES;

EID: 34848919129     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2780114     Document Type: Article

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