Tuning the contact resistance in nanoscale oligothiophene field effect transistors

Applied Physics Letters

Volumn 91, Issue 13, 2007, Pages

  Hoppe, A ^a   Seekamp, J ^a   Balster, T ^a   Gotz G ^b   Bauerle P ^b   Wagner, V ^a  

^a JACOBS UNIVERSITY BREMEN   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; ELECTRON MOBILITY; OLIGOMERS; THIOPHENE; TRANSPORT PROPERTIES;

BOTTOM-CONTACT TRANSISTORS; DIHEXYL- N -THIOPHENE (DHNT) SEMICONDUCTORS; INTRINSIC MOBILITY;

FIELD EFFECT TRANSISTORS;

EID: 34848858479     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2790789     Document Type: Article

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