Nonlinear dependence of photocarrier radiometry signals from p- Si wafers on optical excitation intensity

Journal of the Electrochemical Society

Volumn 154, Issue 11, 2007, Pages

  Tolev, Jordan ^a   Mandelis, Andreas ^a   Pawlak, Michal ^a,b,c  

^a DEPARTMENT OF MECHANICAL AND INDUSTRIAL ENGINEERING   (Canada)

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c NICOLAUS COPERNICUS UNIVERSITY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL NONLINEARITIES; ELECTRON TRANSPORT PROPERTIES; LASER RADIATION; SILICON WAFERS; WAVELENGTH;

CARRIER RECOMBINATION; EXPERIMENTAL SLOPES; OPTICAL EXCITATION INTENSITY;

RADIOMETRY;

EID: 34848840696     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2780862     Document Type: Article

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