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Volumn 89, Issue 3, 2007, Pages 729-735
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Effect of processing parameters on the deposition rate of Si 3N4/Si2N2O by chemical vapor infiltration and the in situ thermal decomposition of Na2SiF 6
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR INFILTRATION;
DEPOSITION RATES;
NITROGEN;
PARAMETER ESTIMATION;
PARTIAL PRESSURE;
PYROLYSIS;
SODIUM COMPOUNDS;
INCUBATION;
NITROGEN PRECURSORS;
SILICON NITRIDE;
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EID: 34748902288
PISSN: 09478396
EISSN: 14320630
Source Type: Journal
DOI: 10.1007/s00339-007-4153-z Document Type: Article |
Times cited : (14)
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References (16)
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