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Volumn 89, Issue 3, 2007, Pages 729-735

Effect of processing parameters on the deposition rate of Si 3N4/Si2N2O by chemical vapor infiltration and the in situ thermal decomposition of Na2SiF 6

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR INFILTRATION; DEPOSITION RATES; NITROGEN; PARAMETER ESTIMATION; PARTIAL PRESSURE; PYROLYSIS; SODIUM COMPOUNDS;

EID: 34748902288     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-007-4153-z     Document Type: Article
Times cited : (14)

References (16)
  • 11
    • 34748851603 scopus 로고
    • (Lewis Research Center) available online
    • A.K. Misra, NASA Contractor Report 4271 (Lewis Research Center, 1990), available online
    • (1990) NASA Contractor Report , vol.4271
    • Misra, A.K.1
  • 14
    • 0004284217 scopus 로고
    • Society of Manufacturing Engineers Dearborn, MI
    • R. Roy, A Primer on the Taguchi Method (Society of Manufacturing Engineers, Dearborn, MI, 1990)
    • (1990) A Primer on the Taguchi Method
    • Roy, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.