Characterization of polycrystalline silicon thin films fabricated by excimer laser crystallization

Journal of Russian Laser Research

Volumn 28, Issue 4, 2007, Pages 383-392

  Kuo, Chil Chyuan ^a  

^a MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Crystallinity; Excimer laser crystallization; Grain size; Phase transformation mechanisms; Poly Si; Surface roughness

Indexed keywords

EID: 34748893659     PISSN: 10712836     EISSN: 15738760     Source Type: Journal    
DOI: 10.1007/s10946-007-0027-2     Document Type: Article

References (17)

1. J. S. Im, H. J. Kim, and M. O. Thompson, Appl. Phys. Lett., 63, 1969 (1993).
2. J. S. Im, M. A. Crowder, R. S. Spodili, et al., Phys. Stat. Sol. (a), 166, 603 (1998).
3. R. S. Sposili and J. S. Im, Appl. Phys. Lett., 69, 2864 (1996).
4. J. S. Im and H. J. Kim, Appl. Phys. Lett., 64, 2303 (1994).
5. C. C. Kuo, W. C. Yeh, C. B. Chen, and J. Y. Jeng, Thin Solid Films, 515, 1651 (2006).
6. F. Secco d'Aragona, J. Electrochem. Soc., 119, 948 (1972).
7. D. H. Auston, C. M. Surko, T. N. C. Venkatesan, et al., Appl. Phys. Lett., 33, 437 (1978).
8. Y. Taniguchi, T. Katou, M. Hiramatsu, and M. Matsumura, Jpn J. Appl. Phys., 45, 7763 (2006).
9. S. R. Stiffler, M. O. Thompson, and P. S. Peercy, Phys. Rev. Lett., 60, 2519 (1988).
10. H. Kuriyama, S. Kiyama, S. Noguchi, et al., Jpn J. Appl. Phys., 30 (1991).
11. R. Ishihara, M. He, V. Rana, et al., Thin Solid Films, 487, 97 (2005).
12. M. O. Thompson, G. J. Galvin, and J. W. Mayer, Phys. Rev. Lett., 52, 2360 (1984).
13. S. R. Stiffler, M. O. Thompson, and P. S. Peercy, Phys. Rev. B, 43, 9851 (1991).
14. D. K. Fork, G. B. Anderson, J. B. Boyce, et al., Appl. Phys. Lett., 68, 2138 (1996).
15. S. A. Lyon, R. J. Nemanich, N. M. Johnson, and D. K. Biegelsen, Appl. Phys. Lett., 40, 316 (1982).
16. T. Toyama, R. Muhida, T. Harano, et al., Jpn J. Appl. Phys., 42, L1347 (2003).
17. N. Higashi, G. Nakagawa, T. Asano, et al., Jpn J. Appl. Phys., 45, 4347 (2006).