Ka-band SiGe HBT power amplifier for single-chip T/R module applications

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 1071-1074

  Riemer, Paul J ^a   Humble, James S ^a   Prairie, Jason F ^a   Coker, Jonathan D ^a   Randall, Barbara A ^a   Gilbert, Barry K ^a   Daniel, Erik S ^a  

^a MAYO CLINIC   (United States)

Author keywords

BiCMOS; HBT; IBM 8HP; Ka Band; Power amplifier; SiGe; Wilkinson power combiner

Indexed keywords

BICMOS TECHNOLOGY; ELECTRIC POWER MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; MACHINE DESIGN; MICROPROCESSOR CHIPS; SEMICONDUCTING SILICON COMPOUNDS;

COMPRESSION POINTS; WILKINSON POWER COMBINERS;

POWER AMPLIFIERS;

EID: 34748888374     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380278     Document Type: Conference Paper

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