An 84 GHz bandwidth and 20 dB gain broadband amplifier in SiGe bipolar technology

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 21-24

  Trotta, Saverio ^a,b   Knapp, Herbert ^a   Aufinger, Klaus ^a   Meister, Thomas F ^a   Böck, Josef ^a   Simbürger, Werner ^a   Scholtz, Arpad L ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Broadband amplifier; SiGe

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; ELECTRIC CONDUCTIVITY; INTEGRATED CIRCUITS; OPTICAL DESIGN; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON ALLOYS; TELECOMMUNICATION SYSTEMS;

COMPOUND SEMICONDUCTOR (CS); DIFFERENTIAL GAIN; SIGE BIPOLAR TECHNOLOGY;

BROADBAND AMPLIFIERS;

EID: 34748846086     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319909     Document Type: Conference Paper

References (9)

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