Growth and characterization of high-quality 6H-SiC (0115) bulk crystals

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 17-20

  Filip, O ^a   Epelbaum, B M ^a   Bickermann, M ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Alternative growth direction; Defects

Indexed keywords

DEFECTS; DISLOCATIONS (CRYSTALS); GRAPHITE;

EXPANSION ANGLES; GRAPHITE CRUCIBLES; GRAPHITE WALLS; GROWTH DIRECTIONS; MAXIMUM DENSITY; ORIENTED CRYSTALS; POLYCRYSTALLINE; SPECIFIC DEFECTS;

SILICON CARBIDE;

EID: 34748841001     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.17     Document Type: Conference Paper

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