Applications of GaN HEMTs and SiC MESFETs in high efficiency class-E power amplifier design for WCDMA applications

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 1099-1102

  Lee, Yong Sub ^b   Jeong, Yoon Ha ^a,b  

^a IEEE

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Class E power amplifier; GaN HEMT; Power added efficiency; Si LDMOS; SiC MESFET

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; ELECTRIC LINES; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; MOS DEVICES; SILICON CARBIDE;

BANDGAP DEVICES; POWER ADDED EFFICIENCY; POWER LEVELS;

POWER AMPLIFIERS;

EID: 34748832891     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380285     Document Type: Conference Paper

References (8)

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