An enhanced empirical large signal model of SiC MESFETs for power applications

SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings

Volumn , Issue , 2005, Pages 28-31

  Sayed, Ahmed ^a   Boeck, Georg ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; IDENTIFICATION (CONTROL SYSTEMS); MATHEMATICAL MODELS; POWER AMPLIFIERS; SIGNAL PROCESSING; SILICON CARBIDE;

ANGELOV'S FORMULATION; DRAIN CURRENT; POWER APPLICATIONS;

MOSFET DEVICES;

EID: 33847204039     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMOC.2005.1580056     Document Type: Conference Paper

References (9)

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2. A. Rofougaran and A. A. Abidi, "A table lookup FET model for accurate analog circuit simulation," IEEE Trans. Microwave Theory and Tech., vol. 47, pp. 2350-2357, Dec. 1999.
3. I. Angelov, N. Rorsman, J. Stenarson, M. Garcia and H. Zirath, "An empirical table-based FET model," IEEE Trans. Computer Aided Design, vol. 12, pp. 324-335, Feb. 1993.
4. A. Sayed and G. Boeck; "Small signal modeling of SiC power MESFETs for ultra broadband power amplifiers," 28th WOCSDICE, Slovakia, pp. 79-80, May 2004.
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8. W. R. Curtice, "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans. Microwave Theory Tech., vol. 28, pp. 448-456, May 1980.
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