Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn 1, Issue , 2006, Pages 279-282

  Angelov, I ^a   Andersson, K ^a   Schreurs, D ^b   Xiao, D ^b   Rorsman, N ^a   Desmaris, V ^a   Sudow, M ^a   Zirath, H ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

FET; Transistor models

Indexed keywords

GALLIUM NITRIDE; MESFET DEVICES; MICROWAVES; SEMICONDUCTING GALLIUM; SILICON CARBIDE;

(P ,P ,T) MEASUREMENTS; ALGAN GAN; ASIA PACIFIC; CAD TOOLS; CONFERENCE PROCEEDINGS; LARGE SIGNALS; PHYSICAL TREATMENTS;

COMPUTER AIDED DESIGN;

EID: 34748828312     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APMC.2006.4429422     Document Type: Conference Paper

References (12)

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11. ADS user manual
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