On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Volumn 2005, Issue , 2005, Pages 309-312

  Angelov, I ^a   Desmaris, V ^a   Dynefors, K ^a   Nilsson, P A ^a   Rorsman, N ^a   Zirath, H ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; GALLIUM NITRIDE; MATHEMATICAL MODELS; MESFET DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SIGNAL THEORY;

FET MODELS; HARMONICS MANAGEMENT; LARGE SIGNAL MEASUREMENTS (LS); LARGE SIGNAL MODELING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847335185     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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12. ADS user manual