Dynamic gate bias technique for improved linearity of GaN HFET power amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 499-502

  Conway, Adam M ^a   Zhao, Yu ^a   Asbeck, Peter M ^a   Micovic, Miroslav ^b   Moon, Jeong ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

Dynamic gate bias; GaN; Linearity; Power amplifiers

Indexed keywords

AM-AM DISTORTION; DYNAMIC GATE BIAS; INTERMODULATION DISTORTION; LINEARITY;

FIELD EFFECT TRANSISTORS; INTERMODULATION; LINEARIZATION; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL DISTORTION; SIGNAL PROCESSING;

POWER AMPLIFIERS;

EID: 33749266058     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516639     Document Type: Conference Paper

References (6)

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3. M. Nagahara et al, "Improved intermodulation distortion profile of AlGaN/GaN HEMT at high drain bias voltage,", 2002 IEEE International Electron Devices Meeting Dig., IEEE 2002 pp. 693-6, Dec 2002.
4. Y. Zhao, et al, "Doherty Amplifier with DSP Control to Improve Performance in CDMA Operation," IEEE Trans MTT-IMS Dig., vol. 3, pp. 2000-2004, June 2003.
5. M. Micovic et al, "GaN Double Heterojunction Field Effect Transistor For Microwave and Millimeterwave Power Applications,", 2004 IEEE International Electron Devices Meeting Dig., IEEE, Dec 2004.
6. A. Andrea, et al, "RF power amplifier linearization through amplitude and phase predistortion," IEEE Trans. Commun, vol. 44, pp. 1477-1484, Nov. 1996.